Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6535745 | Solar Energy Materials and Solar Cells | 2014 | 5 Pages |
Abstract
We developed high throughput, high efficiency 1.43Â m2 hydrogenated amorphous silicon (a-Si:H) single-junction photovoltaic (PV) modules using a two-step deposition for the intrinsic a-Si:H absorber with the high deposition rate of 0.41Â nm/s. The developed module using the two-step deposition method leads to higher initial maximum power (Pmax) due to the reduced recombination loss at the p/i interface, compared to the a-Si:H single-junction PV module fabricated by the conventional one-step deposition with the low deposition rate of 0.20Â nm/s. In addition, the developed module exhibits moderate light-induced degradation ratio of 26.1% in an outdoor exposure test with accumulated solar irradiance >380Â kWh/m2. Thus, the comparable energy output gain is confirmed via a long-term outdoor field test. Consequently, superior throughput of the developed module over the conventional module is possible with comparable stabilized performance.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Seung Yeop Myong, Sang Won Jeon,