Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6535770 | Solar Energy Materials and Solar Cells | 2014 | 5 Pages |
Abstract
Surface sulfurization of Cu(In,Ga)Se2 (CIGS) thin films was carried out using liquid ditertiarybutylsulfide [(t-C4H9)2S: DTBS] to improve the performances of CIGS-based solar cells. The initial CIGS thin films were prepared by using the conventional three-stage co-evaporation process. Characterization by scanning electron microscopy, energy dispersive X-ray spectroscopy line scan, X-ray diffraction, and photoluminescence showed that the electrical and optical properties of the absorber layers were improved after sulfurization. The performances of the solar cells incorporating the CIGS films were remarkably improved when films sulfurized with DTBS were used. The efficiency of the solar cells fabricated with CIGS films increased significantly from 12.4% to 13.6% with an open-circuit voltage of 642Â mV, short-circuit current density of 30.95Â mA/cm2, and a fill factor of 68.2%. The improved cell performances can be attributed to the formation of a very thin sulfide layer on the CIGS layer and/or surface passivation by S atoms.
Related Topics
Physical Sciences and Engineering
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Authors
Xiaohui Liu, Zhengxin Liu, Fanying Meng, Mutsumi Sugiyama,