| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6535850 | Solar Energy Materials and Solar Cells | 2014 | 8 Pages |
Abstract
Compared to the lateral etching rate of AlAs sacrificial layer with pure HF solution (3.6 μm/min), the higher lateral etching rate of 7.4-14.3 μm/min was obtained using these HF-mixture solutions.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Fan-Lei Wu, Sin-Liang Ou, Ray-Hua Horng, Yu-Cheng Kao,