| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6535980 | Solar Energy Materials and Solar Cells | 2013 | 6 Pages |
Abstract
The influence of annealing treatment of molybdenum (Mo) film on the growth of CuInSe2 (CIS) thin film has been studied. We show that Mo film is with much better electrical conductivity and adhesion after being annealed in vacuum. It is found that annealing of Mo film not only modifies the orientation of In2Se3 (IS) precursor, but also the texture of CIS crystal. Thermally treated Mo film favors the growth of (220/204) oriented CIS film. CIS solar cell grown on annealed Mo film is found to be with higher device efficiency, which is attributed to the increased fill factor (FF).
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Jun Tong, Hai-Lin Luo, Zhu-An Xu, Hao Zeng, Xu-Dong Xiao, Chun-Lei Yang,
