| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6535992 | Solar Energy Materials and Solar Cells | 2013 | 5 Pages |
Abstract
Criteria and techniques of device-grade thin film silicon deposition for high efficiency solar cells developed in Panasonic/Sanyo were reviewed. By applying these techniques, record efficiencies were achieved for a-Si single junction, a-Si/a-SiGe tandem junction. We have also fabricated very high-efficiency a-Si/µc-Si tandem solar cells and modules with a very high µc-Si deposition-rate (>2.0 nm/s) of device-grade µc-Si layers using Localized Plasma Confinement CVD.
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Authors
A. Terakawa,