Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6536176 | Solar Energy Materials and Solar Cells | 2013 | 5 Pages |
Abstract
Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al2O3, ZrO2, Y2O3, and La2O3 thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current-density as low as 3Ã10â7Â A/cm2, a fill factor up to 71.3%, and open-circuit voltage as high as 527Â mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La2O3. ZrO2 and notably Al2O3 show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy.
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Catalysis
Authors
O. Bethge, M. Nobile, S. Abermann, M. Glaser, E. Bertagnolli,