Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6536204 | Solar Energy Materials and Solar Cells | 2013 | 6 Pages |
Abstract
High-efficiency Cu(In,Ga)Se2 thin-film solar cells typically include CdS buffer layers deposited in a chemical bath. In this work, Cu(In,Ga)Se2 devices are presented in which the CdS buffer layer was omitted completely. Instead, low-energy ion implantation of group-II-elements (Cd, Zn, and Mg) is applied in order to establish an n-type surface layer in p-type Cu(In,Ga)Se2 absorber layers. Therefore, thermal annealing procedures were developed which lead to a full recovery of the implantation induced defects and simultaneously minimize the diffusion of the dopants. Such a treatment is shown to provide high-quality p-n junction functionality and buffer-free Cu(In,Ga)Se2 thin-film solar cells with open-circuit voltages close to 600Â mV and efficiencies exceeding 10 %.
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Authors
J. Haarstrich, M. Teichmann, H. Metzner, M. Gnauck, C. Ronning, W. Wesch, T. Rissom, C.A. Kaufmann, H.W. Schock, V. Scheumann, W. Mannstadt,