Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6536381 | Solar Energy Materials and Solar Cells | 2013 | 8 Pages |
Abstract
In this work we propose the use of a plasma dry etching technique to condition the morphology of a silicon surface. The low environmental impacted NF3 halogen compound is adopted together with Ar to perform a multi-step process which helps to enhance the silicon surface texturing, thus reducing the time needed for the whole dry etching procedure, which also include saw damage removal on silicon wafers. A detailed study of surface reflectance and etching rate as a function of the dry plasma process parameters is discussed to achieve suitable multi-crystalline silicon surfaces for photovoltaic applications.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
L. Cecchetto, L. Serenelli, G. Agarwal, M. Izzi, E. Salza, M. Tucci,