| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6536515 | Solar Energy Materials and Solar Cells | 2012 | 7 Pages |
Abstract
⺠MG-Si (1,450 ppm of impurities) was processed by 1 and 2 passes of zone melting at 1 and 10 mm/min. ⺠ZM process reduced 98% of the total amount of impurities. ⺠C and O were reduced to levels presented in the electronic grade silicon. ⺠Electrical resistivity showed to be dependent on the B concentration, but not on the P or the total amount of impurities.
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Authors
P.R. Mei, S.P. Moreira, E. Cardoso, A.D.S. Côrtes, F.C. Marques,