| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6536538 | Solar Energy Materials and Solar Cells | 2012 | 7 Pages |
Abstract
⺠The paper shows that device quality μc-Si:H can be achieved without a preferential <110> orientation. ⺠The layers were grown as they are used in solar cell-on a rough substrate. ⺠A μc-Si:H p-doped layer was investigated by Grazing Incident and Bragg-Brentano XRD. ⺠A correlation between structural properties and solar cell performance is given. ⺠More stacking faults and twin show on lattice planes oriented parallel to sample surface to lattice planes oriented differently.
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Authors
S. Schicho, F. Köhler, R. Carius, A. Gordijn,