| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 656421 | International Journal of Heat and Mass Transfer | 2016 | 5 Pages |
Abstract
This short communication shows a model established for simulating oxygen distribution in silicon ingot cast by cold crucible continuous casting (4C). The solution indicates that the oxygen distribution along the ingot growth direction is mainly affected by its segregation and its concentration tends to be constant with the casting proceeds. Comparing the solution with the measurement results, the oxygen segregation coefficient is proved to be slightly less than one during 4C.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Fluid Flow and Transfer Processes
Authors
Feng Huang, Ruirun Chen, Hongsheng Ding, Yanqing Su,