Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
657950 | International Journal of Heat and Mass Transfer | 2013 | 5 Pages |
Abstract
The thin film deposition property and the process difference during the wafer size migration from 12â³ (300Â mm) to 18â³ (450Â mm) in the Chemical Vapor Deposition (CVD) equipment is improved and reduced, respectively, when the chamber hardware is designed with the help of 3D full chamber modeling and 3D experimental visual technique developed in this work. The accuracy of 3D chamber simulation model is demonstrated with the experimental visual technique measurement. With the CVD chamber hardware design of placing the inlet position and optimizing the distance between the susceptor edge and the reactor wall, the better thin film deposition property and the larger process compatibility during the wafer size migration from 12â³ (300Â mm) to 18â³ (450Â mm) for the industry cost reduction can be achieved. Non-dimensional Nusselt parameter is also found to be the effective indicator to monitor the thin film deposition property.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Fluid Flow and Transfer Processes
Authors
M.-H. Liao, C.-H. Chen, S.-C. Kao,