Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6603433 | Electrochimica Acta | 2018 | 8 Pages |
Abstract
N doped MoS2 quantum dots (QDs) are fabricated on large scale using a facile sintering/etching/exfoliation process we first proposed. Compared to pure MoS2 and N-doped MoS2 nanosheets, N-MoS2 QDs exhibit high hydrogen evolution reaction (HER) activity with small onset overpotential of 82â¯mV, overpotential of 165â¯mVâ¯at 10â¯mA/cm2, a Tafel slope of 51.2 mV/dec and remarkable stability. The enhanced catalytic activity could be ascribed to the combination of increasing the active sites by reducing the size of MoS2 and improving the conductivity of MoS2 basal plane by chemical doping effect. This work paves a simplistic route for enhancing the HER activity of layered transition metal dichalcogenide based catalysts.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Peng Zhang, Benhua Xu, Guilin Chen, Cunxu Gao, Meizhen Gao,