Effect of Current Pulse on Electronic Properties of Cu2O Films Fabricated by Electrochemical Deposition Process

This study revealed the characteristics of p-type Cu2O (p-Cu2O) and n-type Cu2O (n-Cu2O) films prepared under different current pulse periods (CPPs) applied in the electrochemical deposition (ECD) processing. Two types of Cu2O semiconductor films, p- and n-Cu2O, were fabricated by the ECD processing using different CPP settings in base (pH =11) and acid (pH =4.9) solutions, respectively. Results showed that the growing mechanisms of Cu2O particles in the acid and base solutions were different according to the growth images of Cu2O particles under different CPP settings. The particle size increased as longer CPP values were set for the fabrication of the p-Cu2O films. For the n-Cu2O, the particle maintained the same size as CPP increased. The morphology effect of the CPP settings on the electronic properties of the prepared p- and n-Cu2O films were evaluated using the current-voltage (I-V) and Mott-Schottky tests. The optimal CPP settings were discussed and determined to prepare the low electrical resistance of the p- and n-Cu2O films.