Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6612770 | Electrochimica Acta | 2014 | 8 Pages |
Abstract
The CdS sensitized N-TiO2 (CdS-N-TiO2) inverse opals films were prepared by a sol-gel method integrated with successive ionic layer adsorption and reaction (SILAR). In order to harvest the visible sunlight and enhance the photocurrent, photosensitization of CdS (narrow-bandgap semiconductor) and nitrogen doping are used to couple with TiO2 inverse opals. The good visible light absorption ability and significant increase of photoresponse of CdS-N-TiO2 inverse opals films have been observed compared to TiO2 or N-TiO2 inverse opals films. A promising photocurrent density of 0.83Â mA/cm2 has been achieved for the CdS-N-TiO2 inverse opal as photoanode at 1.23Â mV versus reversible hydrogen electrode (RHE) bias under simulated solar-light illumination. Because the synergistic effect of CdS sensitization and N-doping with periodically ordered inverse opal nanostructures, the photocurrent density is enhanced in comparison to the pristine TiO2 inverse opals films.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Cheng Cheng, Haisheng Wang, Juchuan Li, Hai Yang, Anjian Xie, Ping Chen, Shikuo Li, Fangzhi Huang, Yuhua Shen,