Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6614510 | Electrochimica Acta | 2014 | 6 Pages |
Abstract
Ge-doped Li7La3Zr2O12 (LLZ) is prepared via the conventional solid-state reaction. Our results showed that doping Ge of less than 1 wt% could stabilize the cubic phase of garnet-type LLZ and also increase its ionic conductivity up to 8.28Â ÃÂ 10â4 S/cm at room temperature. When the content of Ge dopant is higher, GeO2 impurity phase would appear and there coexists cubic and tetragonal mixed structures, lowering the conductivity. By combining X-ray absorption near-edge spectroscopy and full multiple-scattering theory, we find that Ge more likely enters into the Li and La crystallographic sites instead of the Zr site, which provides understanding of the micro-structural modulation by Ge dopants and the subsequent enhancement in the ionic conductivity.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Mian Huang, Wei Xu, Yang Shen, Yuan-Hua Lin, Ce-Wen Nan,