Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6615276 | Electrochimica Acta | 2013 | 7 Pages |
Abstract
- Scanning droplet cell microscopy was applied for local gate oxide writing.
- Sharp lines are obtained at the highest writing speed of 1 mm minâ1.
- 13.4Â kCÂ cmâ3 was found as charge per volume for aluminium oxide.
- High field constant of 24 nm Vâ1 and dielectric constant of 12 were determined for Al2O3 by CV and EIS.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Christian M. Siket, Andrei Ionut Mardare, Martin Kaltenbrunner, Siegfried Bauer, Achim Walter Hassel,