Surface patterned dielectrics by direct writing of anodic oxides using scanning droplet cell microscopy

- Scanning droplet cell microscopy was applied for local gate oxide writing.
- Sharp lines are obtained at the highest writing speed of 1 mm min−1.
- 13.4 kC cm−3 was found as charge per volume for aluminium oxide.
- High field constant of 24 nm V−1 and dielectric constant of 12 were determined for Al2O3 by CV and EIS.