Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6616168 | Electrochimica Acta | 2013 | 31 Pages |
Abstract
- Metal catalyst concentration is the crucial parameter for the metal assisted etching of silicon.
- The amount of metal catalyst on the silicon surface controls the etch rate, etch regime and resulting surface morphology independent of etch solution composition.
- Clear analogy between the catalyst concentration in metal assisted etching and current in electrochemical etching.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
J. Cichoszewski, M. Reuter, F. Schwerdt, J.H. Werner,