Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6616804 | Electrochimica Acta | 2013 | 27 Pages |
Abstract
ZnO porous thin films with nanowire structure were deposited by the one-step electrochemical deposition method. And a CdS layer was coated on the as-deposited ZnO nanowire thin films by successive ionic layer adsorption and reaction (SILAR) method to passivate surface states. Then the films were further sensitized by CdSe quantum dots (QDs) to serve as a photoanode for fabricating quantum dots-sensitized solar cells (QDSSCs). The effect of the CdS interfacial passivation layer on the performance of the QDSSCs was systematically investigated by varying the SILAR cycle number and heating the passivation layer. The amorphous CdS layer with an optimized thickness can effectively suppress the recombination of the injected electrons with holes on QDs and the redox electrolyte. The newly formed CdS layer on the surface of the ZnO nanowire thin film obviously prolongs the electron lifetime in the passivated ZnO nanoporous thin film because of the lower surface trap density in the ZnO nanowires after CdS deposition, which is favorable to the higher short-circuit photocurrent density (Jsc). For the CdSe QDs-sensitized ZnO nanoporous thin film with the interfacial passivation layer, the Jsc and conversion efficiency can reach a maximum of 8.36Â mAÂ cmâ2 and 2.36%, respectively. The conversion efficiency was improved by 83.47% compared with that of the cell based on the CdSe QDs-sensitized ZnO nanoporous thin film without CdS interfacial passivation (0.39%).
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Authors
Jingbo Zhang, Chuanzhen Sun, Shouli Bai, Ruixian Luo, Aifan Chen, Lina Sun, Yuan Lin,