| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6617495 | Electrochimica Acta | 2013 | 11 Pages |
Abstract
- SAMs of 4,4â²-thio-bis-benzene-thiolate were formed at p-GaAs(1Â 1Â 1) surfaces.
- Both As and Ga are involved in thiolate formation.
- Only one SH group participates in the chemisorption bond.
- Thiolate layer formed at GaAs(1Â 1Â 1)B is more stable than that formed at GaAs(1Â 1Â 1)A.
- Terminal atoms control the chemisorption-and packing-forces joint action.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Loredana Preda, Catalin Negrila, Mihail F. Lazarescu, Mirela Enache, Mihai Anastasescu, Ana M. Toader, Sorana Ionescu, Valentina Lazarescu,