Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6618346 | Electrochimica Acta | 2012 | 6 Pages |
Abstract
We studied electroless Co-W-B plating in through-Si vias (TSVs) using Pd nanoparticles (Pd-NPs) as a catalyst. The density of adsorbed Pd-NPs on SiO2 in the high aspect ratio TSVs was over 8500/μm2 after a long adsorption treatment. No Pd-NP agglomeration was observed. In contrast, agglomerates of large particles were observed after a conventional Sn-Pd colloid adsorption treatment. Using a Pd-NP catalyst, we succeeded in the formation of a thin continuous electroless Co-W-B barrier layer in high aspect ratio TSVs. The adhesion strength of the Co-W-B layer increased with increasing particle density of the Pd-NPs. These results indicate that the process with Pd-NPs catalyst is a promising method for the formation of a thin barrier layer in high aspect ratio TSVs at low temperatures.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Fumihiro Inoue, Tomohiro Shimizu, Hiroshi Miyake, Ryohei Arima, Toshihiko Ito, Hirofumi Seki, Yuko Shinozaki, Tomohiko Yamamoto, Shoso Shingubara,