Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6618429 | Electrochimica Acta | 2012 | 7 Pages |
Abstract
Etching of detrimental CuxSe phases is investigated with 5% and 0.5% (w/w) aqueous KCN. The slower 0.5% (w/w) KCN etch allows better process control, and re-annealing at 500 °C for 30 min followed by further etching significantly improved the photo-activity. However, over the large area local pinhole recombination effects are substantial. An alternative low temperature film optimisation method is proposed based on (i) KCN over-etch, (ii) hypochlorite (5%, w/w) pinhole removal (Mo etch), and (iii) a final KCN etch to give good and more uniform activity.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Charles Y. Cummings, Guillaume Zoppi, Ian Forbes, Diego Colombara, Laurence M. Peter, Frank Marken,