Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6659174 | Hydrometallurgy | 2016 | 8 Pages |
Abstract
The effect of hydrogen peroxide as a novel oxidizing agent on purifying metallurgical grade silicon (MG-Si) by leaching with hydrofluoric acid was investigated as a function of temperature, leaching duration, stirring and hydrofluoric acid concentration. It was found that adding oxidizing agent resulted in enhancing the extraction of impurities from MG-Si as compared to that without oxidizing agent, especially for some non-dissolving elements in the acid like copper. After 2 h of leaching MG-Si with an acid mixture composed of 1 mol Lâ 1 hydrofluoric acid and 2 mol Lâ 1 hydrogen peroxide, the purity of MG-Si increased from 99.74 to 99.99%, which was higher than 99.97% obtained without hydrogen peroxide addition. Based on cracking shrinking model, the leaching MG-Si with the mixture was under chemical reaction control. Furthermore, to investigate the reaction mechanism on leaching MG-Si, the micro-structural evolutions of MG-Si before and after exposure to each etchants were revealed.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Huixian Lai, Liuqing Huang, Chuanhai Gan, Pengfei Xing, Jintang Li, Xuetao Luo,