| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6659981 | The Journal of Chemical Thermodynamics | 2016 | 26 Pages |
Abstract
Diffusion growth of Ga3+-doped LiTaO3(LT) thin film was studied thermodynamically. Some Ga3+-doped LT thin films were grown on LT surface by in-diffusion of homogeneously coated Ga2O3 film at the temperature range of (1273 to 1473)Â K. The Ga3+ profile in the grown thin film was analyzed by secondary ion mass spectrometry. Form the measured Ga3+ profiles, some thermodynamic parameters were obtained. These include diffusivity, diffusion constant, chemical activation energy, solubility, solubility constant and enthalpy of solution. These parameters are crucial to design and growth of a Ga3+-doped LT thin film with desired Ga3+ profile for integrated optics application. A thermodynamic model is suggested for the growth and verified experimentally.202
Keywords
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Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
De-Long Zhang, Qun Zhang, Pei Zhang, Jian Kang, Wing-Han Wong, Dao-Yin Yu, Edwin Yue-Bun Pun,