| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6669581 | Journal of Industrial and Engineering Chemistry | 2015 | 6 Pages |
Abstract
- High quality, p-type ZnO thin films can be achieved via Al and N co-doping process.
- The effect of ammonia concentration on films optoelectronic properties was investigated.
- The developed thin film is highly transparent with high carrier concentration.
- Excessive ammonia in the initial precursor degraded resultant film.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Ian Y.Y. Bu,