| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 670075 | International Journal of Thermal Sciences | 2011 | 7 Pages |
Abstract
⺠A new technique is developed to directly grow copper nanowire on silicon substrate. ⺠Increasing nanowire height improves boiling performance. ⺠Optimal results were obtained in pool boiling with 35 nm long nanowires.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Fluid Flow and Transfer Processes
Authors
Z. Yao, Y.-W. Lu, S.G. Kandlikar,