Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6846159 | Nuclear Energy and Technology | 2016 | 8 Pages |
Abstract
Surface recession does not dominate for 60 keV Cu- ion implantation of silica glass. Formation of dynamically stable structures during 60 keV Cu- ion implantation of silica glass cannot be explained if the drift of implants is excluded from considerations. Considerations have shown that the drift's contribution increases with increasing the ion flux. A mechanism of depleted region formation in the dynamically stable structures has been demonstrated. According to this mechanism, formation of a depleted region within the implanted layer is caused by expelling effect of electric field from the region where the electric field is zero. Necessary drift velocity is provided by Cu+ solutes. A method utilizing images of the dynamically stable structures has been proposed for evaluation of the implant drift's role in the saturation kinetics.
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Nuclear Energy and Engineering
Authors
Ð.Ð. Plaksin,