| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 691116 | Journal of the Taiwan Institute of Chemical Engineers | 2013 | 5 Pages |
In/Cu2Se couples were reacted at 623 K and 723 K for 1800–14,400 s. In4Se3 and non-planar finger-type CuInSe2 were formed at the In/Cu2Se interface. The η-Cu2In phase was formed with longer reaction time. In addition to these phases formed at the interfaces, precipitates of CuInSe2 formed in the Cu2Se substrate and chunky CuInSe2 phase formed at the end of the Cu2Se substrate. Results in the In/Cu2Se/Ni couple reacted at 723 K show that the reaction phases at the In/Cu2Se interface and the CuInSe2 precipitates in the Cu2Se substrate are the same, but there is no chunky CuInSe2 phase at the Cu2Se end adjacent to Ni. The CuInSe2 precipitates in the Cu2Se substrate are formed due to supersaturation of indium caused by a decrease in solubility at lower temperatures. The non-planar morphology of the CuInSe2 phase at the interface is caused by the fast diffusion of indium, the segregation and preferred facet growth of the CuInSe2 phase. However, the mechanism for the formation of the chunky CuInSe2 is not clear and further study is required.
► Interfacial reactions in the In/Cu2Se couples at 623 K and 723 K were examined. ► Two intermetallic compounds, In4Se3 and non-planar finger-type CuInSe2, were found. ► Finger CIS morphology is caused by indium fast diffusion and preferred facet growth. ► CuInSe2 precipitates are found inside the Cu2Se substrate of the couples as well. ► The precipitates are formed due to supersaturation of indium at lower temperatures.
