| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 691275 | Journal of the Taiwan Institute of Chemical Engineers | 2014 | 6 Pages |
•Novel Pt/TiO2–WO3 material was prepared for ozone sensor.•The sensor exhibits high sensor response (S = 2712).•Room working temperature of semiconductor type sensor.
Novel sensors based on Pt/TiO2–WO3 metal–oxide semiconductors are a promising inexpensive alternative for commercial ozone monitoring. Pt-doping promotes TiO2–WO3 composite material to respond to ozone, and the doped films presented a high sensor response. The sensing materials were characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and ultraviolet-visible (UV–vis) spectroscopy. When irradiated using a 460-nm light source, the sensor response of Pt/TiO2–WO3 (1:4) was 2712, and the recovery time was 85 s. Pt was doped with TiO2–WO3 to enhance the electron–hole separation, and the sensor response increased. In addition, the recovery time decreased considerably. This study presents a discussion of the slowing of the electron and hole recombination on the surface of the sensing material caused by the charge transfer of the mixing band. Pt/TiO2–WO3 is a high-response photocatalyst when irradiated by visible light in 2.5 ppm of ozone at room temperature.
