Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7001170 | Surfaces and Interfaces | 2018 | 20 Pages |
Abstract
Optical and electrical properties of silver indium sulfide (AgInS2) thin films prepared by two-step process is discussed by varying the deposition time (Td) of silver from 12 to 18â¯min. Formation of tetragonal AgInS2 crystal structure with preferential orientation along (112) plane is observed from X-ray diffraction studies. Raman analysis confirms the existence of both chalcopyrite structure (274 cmâ1) and CuAu ordered structure (305 cmâ1). With the increase in deposition time, grain size of AgInS2 films is found to increase from 0.6 to 0.9â¯Âµm. All the films exhibited p type conductivity with resistivity ranging in the order of 103 to 104 Ω-cm. Depth profile analysis is carried out to determine the valence states of AgInS2 compound throughout the sample. Films deposited at Tdâ¯=â¯16â¯min showed optimum properties and hence the photovoltaic performance of optimized sample is studied.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Colloid and Surface Chemistry
Authors
M. Anantha Sunil, J. Nagaraju, G. Mohan Rao,