The effect of hydrogen plasma chemical annealing on electron field emission of amorphous carbon films

Layer-by-layer deposition method, in which nanometer-thick film deposition and hydrogen plasma annealing processes were alternatively repeated, was applied to fabricate hydrogenated amorphous carbon films in our present work. It was found that the hydrogen plasma treatment changed the sp2/sp3 ratio due to chemical etching. Consequently, a stable vacuum electron emission with a low threshold field was achieved compared with that from conventionally deposited a-C films. The threshold electric field is as low as 2 V/μm. The influence of the hydrogen plasma chemical annealing on the field emission behavior was systematically investigated. The improvement of field emission characteristics can be attributed to the large field enhancement effect due to the inhomogeneous distribution of nanometer scale sp2 clusters.