Numerical simulation and analysis of process parameters of GaN-MOCVD reactor

Commercially, semiconductor thin films for use in electronic devices are typically produced by processes such as chemical vapor deposition. This requires the gas flow, heat distribution, and concentration distribution above the substrate in the reactor to be carefully controlled to ensure that the growth rate and thickness uniformity of the thin film are appropriate. This work involved the simulation of a gallium nitride metal-organic chemical vapor deposition (GaN-MOCVD) reactor with a vertical spray structure. The simulation, which was conducted by using computational fluid dynamics software, enabled us to obtain a numerical solution under steady-flow low-pressure conditions with substrate axisymmetrical rotating. The temperature field, flow field, operating pressure, and rotation speed of the substrate were analyzed, and process conditions were optimized. These conditions make it possible to stabilize the flow field in the reactor to ensure thickness uniformity of the deposited thin film. These results not only provide an effective solution for high-quality epitaxial growth, but also provide a theoretical basis for follow-up experiment and equipment improvement.