| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7116800 | The Journal of China Universities of Posts and Telecommunications | 2017 | 9 Pages |
Abstract
NAND flash chips have been innovated from two-dimension (2D) design which is based on planar NAND cells to three-dimension (3D) design which is based on vertical NAND cells. Two types of NAND flash technologies-charge-trap (CT) and floating-gate (FG) are presented in this paper to introduce NAND flash designs in detail. The physical characteristics of CT-based and FG-based 3D NAND flashes are analyzed. Moreover, the advantages and disadvantages of these two technologies in architecture, manufacture, interference and reliability are studied and compared.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Liu Shijun, Zou Xuecheng,