Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7117004 | The Journal of China Universities of Posts and Telecommunications | 2016 | 5 Pages |
Abstract
Gallium nitride (GaN) high electron mobility transistor (HEMT) with symmetrical structure as a control device is discussed in this paper. The equivalent circuit model is proposed on the basis of physical and electrical properties of the GaN HEMT device. A transistor with 0.5 μm gate length and 6 à 125 μm gate width is fabricated to verify the model, which can be treated as a single pole single throw (SPST) switch due to the ON state and OFF state. The measurement results show a good agreement with the simulation results, which demonstrates the effectiveness of the proposed model.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Du Lin, Yang Xiaofeng, Li Yang, Zhang Jincheng, Hao Yue,