Effect of anionic bath temperature on morphology and photo electrochemical properties of Cu2O deposited by SILAR

Successive ionic layer adsorption and reaction (SILAR) technique with different anionic bath temperatures (40 °C, 60 °C, 80 °C) was used to deposit Cu2O films on ITO substrate. Studies carried out and reported in this work are crystal structure of Cu2O (XRD), transmittance, optical band gap, surface morphological of Cu2O and photocatalytic activity of deposited Cu2O films. The structural study revealed that the crystalline quality was gradually enhanced with increase in bath temperature and preferential orientation of crystal structure is along (111) that is cubic nature. Optical study for Cu2O film shows that anionic bath temperature influences the transmittance and optical band gap of deposited Cu2O samples. SEM images revealed that the morphology for Cu2O film deposited on ITO substrate were of nanowire like structures and with increase in temperature of anionic bath wire structure grows more compact. Photoelectrochemical (PEC) studies revealed that Cu2O deposited at 80 °C shows high photocurrent and good stability.