Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7117365 | Materials Science in Semiconductor Processing | 2018 | 6 Pages |
Abstract
The chemical composition was measured by energy dispersive X-ray spectroscopy. It was observed that Cu content incorporated into the CdTe lattice varied from 1.4 to 1.6â¯at%. Structural characterization revealed the growth of a CdTe hexagonal structure with no preferential orientation for a reference CdTe film. For samples grown combining Cu and CdTe plasmas, it was observed that increasing density of Cu plasma produces a crystalline orientation of the films in the (110) direction. Optical properties of the samples were obtained by UV-Vis spectroscopy, the data was used to estimate band gap using Tauc plots yielding values that decreased slightly form 1.47â¯eV for the reference CdTe film, to 1.41â¯eV for the film grown using the highest Cu plasma density. Scanning electron microscopy was used to study surface morphology, were rougher surfaces were observed as the Cu content in the films was increased.
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Authors
S. Saracho-González, A. Pérez-Centeno, M.A. Santana-Aranda, G. Gómez-Rosas, A. Chávez-Chávez, E. Camps, L.P. Rivera, F. de Moure-Flores, O. Zelaya-Angel, J.G. Quiñones-Galván,