Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7117472 | Materials Science in Semiconductor Processing | 2018 | 7 Pages |
Abstract
In this paper, we characterize and optimize design of a candidate ultraviolet photodiode based on nitrogen-doped ultrananocrystalline diamond hydrogenated amorphous carbon (UNCD/a-C:H) composite films grown on crystalline-Si substrates by coaxial arc plasma deposition. A comprehensive study including growth, fabrication, characterization, and modeling of the photodetector is presented here. The current-voltage characteristics of the device were reproduced and their critical parameters were extracted from a good matching between experimental and simulation results. A midgap acceptor-like defect state density of ~ 5â¯Ãâ¯1017 cmâ3 eVâ1 was found to be the dominant defect in the UNCD/a-C:H film, in addition to an interface defect density of ~ 3â¯Ãâ¯1013 cmâ2 eVâ1 at the interface of the UNCD/a-C:H film and the Si substrate. Experimental and simulation results showed that introducing an intrinsic UNCD/a-C:H layer in a pin heterostructure would significantly reduce the device leakage current and consequently improve its performance as an ultraviolet photodiode. Unoptimized fabricated devices exhibited a room temperature photoresponsivity of 135â¯mA/W measured under illumination of ultraviolet monochromatic light with a wavelength of 254â¯nm. The key parameters for optimized design of the device were extracted and investigated in details.
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Authors
Mahmoud Shaban, Abdelrahman Zkria, Tsuyoshi Yoshitake,