Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7117501 | Materials Science in Semiconductor Processing | 2018 | 9 Pages |
Abstract
Cu2SnS3 (CTS) is a promising absorber for thin film solar cells because of its suitable opto-electronic properties. This article reports the effect of sulfurization temperature (Ts) on the physical properties of CTS thin films deposited by two-stage process. X-ray diffraction and Raman analyses revealed that sulfurized CTS films exhibited different polymorphic forms, such as triclinic structure (at Ts =â¯350â¯Â°C), tetragonal structure (at Ts =â¯400â¯Â°C), and monoclinic structure (at Ts =â¯450â¯Â°C). A phase change from monoclinic CTS to orthorhombic Cu3SnS4 was observed at Ts =â¯500â¯Â°C. The AFM results confirmed that the sulfurized films had the smooth surface without pinholes. The optical band gap was varied in the range, 2.34-1.49â¯eV with increasing sulfurization temperature from 150â¯Â°C to 500â¯Â°C. All the sulfurized films showed p-type conducting nature. The obtained results indicated that single phase CTS films prepared in the temperature range of 400-450â¯Â°C could be used as an absorber layer for the application of thin film solar cells.
Keywords
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Engineering
Electrical and Electronic Engineering
Authors
Phaneendra Reddy Guddeti, Sreedevi Gedi, K.T. Ramakrishna Reddy,