Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7117530 | Materials Science in Semiconductor Processing | 2018 | 9 Pages |
Abstract
Cu2O thin films were obtained from CuO films at drying temperatures lower than 290â¯Â°C and times shorter than 10â¯min in open atmosphere. A rapid transformation of CuO films to Cu2O films at 260â¯Â°C evidenced the existence of a useful reduction mechanism that was studied. A metal precursor solution was prepared from the mixing of copper acetate and monoethanolamine in isopropanol. Thin films of 5 layers were deposited by the dip-coating method at a withdrawal speed of 6â¯cm/min. Each layer was dried in a furnace at 230, 260, 275 or 290â¯Â°C for 5, 7 or 10â¯min. X-ray diffraction, reflectance and transmittance in the UV-Vis region and, specular reflectance in the infrared showed that CuO films are obtained at 230â¯Â°C. However, Cu2O with good crystallinity and transparency is produced with drying at 260â¯Â°C and above, for 10â¯min and less. Band gaps for CuO and Cu2O films were 1.28â¯eV and 2.18â¯eV, respectively. FTIR, resistivity and SEM studies evidenced a reduction mechanism that transforms CuO to Cu2O. The effect is caused by monoethanolamine decomposition into several other reducing compounds, mainly copper carboxylates. Even though some authors have reported similar precursor solutions with monoethanolamine, none have obtained Cu2O in open atmosphere, nor have they explained the organic reaction pathways involved. With the help of other reducing organic compounds, the phenomena can be exploited to produce Cu2O films from CuO ones at milder processing conditions, thus enabling applications for flexible electronics.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
M.A. Badillo-Ávila, R. Castanedo-Pérez, M.A. Villarreal-Andrade, G. Torres-Delgado,