Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7117627 | Materials Science in Semiconductor Processing | 2018 | 6 Pages |
Abstract
An approach for improving sidewall roughness of high-aspect-ratio trench is developed. This method relies on the aspect ratio dependent scalloping attenuation (ARDSA) effect in Bosch process, employs reactive ion etching (RIE) process to avoid the rippled sidewall at the top of the trench, while retains Bosch process with increasing trench depth. As both the RIE and Bosch processes are recognized production techniques, this method is easy to implement. Compared with standard Bosch process, the maximum root mean square (RMS) roughness of the sidewall is brought down from 15.1â¯nm to 6.89â¯nm.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Jianyu Fu, Junjie Li, Jiahan Yu, Ruiwen Liu, Junfeng Li, Weibing Wang, Wenwu Wang, Dapeng Chen,