Article ID Journal Published Year Pages File Type
7117627 Materials Science in Semiconductor Processing 2018 6 Pages PDF
Abstract
An approach for improving sidewall roughness of high-aspect-ratio trench is developed. This method relies on the aspect ratio dependent scalloping attenuation (ARDSA) effect in Bosch process, employs reactive ion etching (RIE) process to avoid the rippled sidewall at the top of the trench, while retains Bosch process with increasing trench depth. As both the RIE and Bosch processes are recognized production techniques, this method is easy to implement. Compared with standard Bosch process, the maximum root mean square (RMS) roughness of the sidewall is brought down from 15.1 nm to 6.89 nm.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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