Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7117645 | Materials Science in Semiconductor Processing | 2018 | 5 Pages |
Abstract
Quality crystal silicon (Si) thin films were grown via the metal-induced growth (MIG) method, which is a low-cost and metal-silicide assisted technique. The metal catalysts of Ni, Pd and Co were first deposited onto substrates for silicide template layer formation. Then, crystal Si thin films with a thickness of ~ 5â¯Âµm were epitaxially deposited on the silicide seeds via DC magnetron sputtering. The crystallinity of the Si films was confirmed and investigated by X-ray diffraction (XRD). These Si thin films were then used to fabricate Al doped ZnO (AZO)/MIG Si heterojunction photodetectors. The device achieved a saturation photocurrent of 23.2â¯mA/cm2 at ââ¯5 V. This photocurrent level is comparable with that of previous reported AZO/bulk-Si devices. Current transport mechanisms and defect distributions were also studied. By analyzing the dark current-voltage (I - V) characteristics, the space charge limited (SCL) current dominated junction behaviors with an exponential defect level distribution were determined. In the bias range of 0.25â¯V <â¯V <â¯1.0â¯V, SCL current transported in the mobility regime based on I â Vβ, where βâ¯>â¯3. For 0 < V <â¯0.25â¯V, tunneling and SCL current in ballistic regime were implied due to I â V1.5. In the reverse bias, the device exhibited SCL current in saturation regime or tunneling, suggested by the unity I-V relation. The fabricated devices with the theoretical understanding of the defect and carrier transport mechanisms provided new design insights for low-cost ZnO/MIG-Si thin film optoelectronics.
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Authors
Chong Tong, Eric S. Kozarsky, Joondong Kim, Juhyung Yun, Wayne A. Anderson,