Article ID Journal Published Year Pages File Type
7117714 Materials Science in Semiconductor Processing 2018 10 Pages PDF
Abstract
In the present work, a continuous growth model of primary silicon from Al-Si melts was established based on the experimental and numerical data to analyze the separation mechanism of primary silicon from Al-Si alloy with high silicon content during electromagnetic directional solidification process. Results show that the separation of primary Si from Al-Si melts depends on the growth rate of primary Si phase and the solidification rate of the melts. Moreover, the separation and enrichment effects of primary Si during the electromagnetic directional solidification process could be improved by enhancing the bottom cooling conditions of crucible and the stirring strength of Al-Si alloy melts. Finally, the distribution and composition of phases and microstructures of the Al-Si alloy after the electromagnetic directional solidification technique were also analyzed and discussed.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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