Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7117801 | Materials Science in Semiconductor Processing | 2018 | 4 Pages |
Abstract
We realized the excellent confinement of carriers in single-layer InAs quantum dots (QDs) via introducing two AlGaAs confining layers (CLs), and then fabricated the corresponding rolled-up InGaAs/GaAs QD microtubes by conventional photolithography and wet-etching. Subsequently, the as-fabricated AlGaAs confined QD microtubes were transferred to a Si-based SiOx substrate using a simple liquid-assisted substrate-on-substrate transfer process, thus obtaining the microtube ring resonators. Through micro-photoluminescence (µPL) measurement, optical modes were observed at room temperature and a maximum Q-factor of ~ 550 was demonstrated. In order to clearly show the effect of AlGaAs CLs, we also fabricated and transferred QD microtubes without AlGaAs CLs for comparison. µPL spectra collected at 80â¯K confirmed that the PL intensity of the central optical mode was increased ~ 10 times with the assistance of AlGaAs CLs. We have confidence that QD microtube ring resonators can be further improved through the incorporation of double-layer QDs together with AlGaAs CLs.
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Electrical and Electronic Engineering
Authors
Guoming Mao, Qi Wang, Zhaoer Chai, Jiawei Cao, Hao Liu, Xiaomin Ren, Nikolai A. Maleev, Alexey P. Vasil'ev, Alexey E. Zhukov, Victor M. Ustinov,