Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7117832 | Materials Science in Semiconductor Processing | 2018 | 6 Pages |
Abstract
The characterization methods of composition uniformity for AlxGa1-xAs layers have been evaluated. The composition measurement errors by using high resolution X-ray diffraction and room-temperature photoluminescence measurements are both around 1% for AlGaAs with Al composition around 0.3, suggesting that the composition uniformity of lower than ±â¯1% cannot be verified through these two characterization methods. The effects of manipulator temperatures on the uniformity of AlGaAs/GaAs epitaxial layers grown by molecular beam epitaxy were also investigated. By using a higher manipulator temperature, the composition uniformity across the 4-in. wafers has been improved. The uniformity of the mobility at 77â¯K for the AlGaAs/GaAs high electron mobility transistor films turns out much more sensitive to the manipulator temperatures, and has been significantly improved by using a higher manipulator temperature.
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Electrical and Electronic Engineering
Authors
Yaguang Zhang, Yi Gu, Pingping Chen, Yonggang Zhang, Yuanliao Zheng, Chunlei Yu, Xue Li, Haimei Gong,