Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7117850 | Materials Science in Semiconductor Processing | 2018 | 9 Pages |
Abstract
Al doped Zinc Oxide (AZO) thin films were deposited on glass substrates using DC magnetron sputtering method at different oxygen argon gas ratio. Effects of oxygen gas concentration ratio on structural, electrical and optical properties of the deposited AZO thin films were investigated by X-ray diffraction (XRD), atomic force microscope (AFM), Hall effect, ellipsometry and UV-visible spectrophotometer measurements. Results established that the films have strong c-axis orientation perpendicular to the substrate surface and exhibit better crystallinity as oxygen argon ratio increases. The lowest resistivity of 4.83 à 10â4 Ω-cm was obtained without using oxygen in the gas mixture. The average optical transmission increased from 73% to 80% in the wavelength range of 350-1100â¯nm and ultraviolet absorption edge shifts toward longer wavelength with the increase of oxygen argon ratio. Higher value of refractive index and a strong orange-red deep level emission was spotted in AZO thin films deposited with higher O2/Ar ratio.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Sukanta Bose, Rayerfrancis Arokiyadoss, P. Balaji Bhargav, Gufran Ahmad, Sourav Mandal, A.K. Barua, Sumita Mukhopadhyay,