| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7117915 | Materials Science in Semiconductor Processing | 2018 | 7 Pages |
Abstract
The structural changes observed near the metal/AlGaN interface can be responsible for this electrical modification deduced by TLM analyses. As a matter of fact, two-dimensional TCAD simulation confirmed that the sheet resistance under the contact and the two-dimensional current distribution are affected by the electrical properties of the alloyed metal/semiconductor interface.
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Authors
Monia Spera, Cristina Miccoli, Raffaella Lo Nigro, Corrado Bongiorno, Domenico Corso, Salvatore Di Franco, Ferdinando Iucolano, Fabrizio Roccaforte, Giuseppe Greco,