Article ID Journal Published Year Pages File Type
7117924 Materials Science in Semiconductor Processing 2018 5 Pages PDF
Abstract
The evaluation and investigation of electrical parameters drifts during device operation is one of the mandatory task that has to be performed in order to improve GaN-power devices stability. In this work the authors would like to present a novel characterization method that allows the simultaneous monitoring of both RON and VTH during the switch-mode operation. By applying the proposed measurement method with different operating parameters it has been possible to provide a preliminary interpretation of the physical mechanisms leading to the observed RON increase and VTH positive shift. In particular, the observed RON increase, which is thermally activated with a 0.83 eV activation energy, has been ascribed to the presence of Carbon-related traps within the device buffer layer. On the other hand, the positive VTH shift has instead been related to interface defects at the dielectric/III-N interface and/or to bulk traps in the gate dielectric.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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