Article ID Journal Published Year Pages File Type
7117983 Materials Science in Semiconductor Processing 2018 6 Pages PDF
Abstract
Enhanced crystallinity and grain growth were observed for Ag containing as-prepared layers as well as selenized layers. As a potential consequence, this enhanced grain growth appears to facilitate the formation of MoSe2 layer at the back contact/absorber interface during the selenization process. Further, the incorporation of Ag improved the performance of kesterite devices up to 7.1% for 5% Ag/(Cu+Ag) composition. However, for Ag contents beyond this level we observed impairing of the device efficiencies with higher Ag content.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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