Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7117983 | Materials Science in Semiconductor Processing | 2018 | 6 Pages |
Abstract
Enhanced crystallinity and grain growth were observed for Ag containing as-prepared layers as well as selenized layers. As a potential consequence, this enhanced grain growth appears to facilitate the formation of MoSe2 layer at the back contact/absorber interface during the selenization process. Further, the incorporation of Ag improved the performance of kesterite devices up to 7.1% for 5% Ag/(Cu+Ag) composition. However, for Ag contents beyond this level we observed impairing of the device efficiencies with higher Ag content.
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Electrical and Electronic Engineering
Authors
Mohamed H. Sayed, Johannes Schoneberg, Jürgen Parisi, Levent Gütay,