Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7117997 | Materials Science in Semiconductor Processing | 2018 | 4 Pages |
Abstract
Self-powered ultraviolet photodetectors based on n-GaN and p-NiO were fabricated through thermal oxidation. The transparent NiO was mainly dominated by [111] texture with an optical band gap of approximately 3.69Â eV. Compared with the conventional Ni/GaN photodetector, the p-NiO/GaN heterostructure photodetector possess a larger turn-on voltage and a smaller dark current because of the relatively higher effective barrier height. At an external bias of 0Â V, the photo responsivity and the UV to visible rejection ratio of the NiO/GaN photodetector are enhanced to 0.15Â A/W and 406, respectively. The improvement in UV photodetector performance is attributed to that the depletion region in NiO/GaN heterostructure can effectively eliminate the trapping charge carriers at the metal/semiconductor interface. The high-performance NiO/GaN photodetectors without driving power are potential for portable UV detectors application.
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Authors
Liuan Li, Zhangcheng Liu, Lei Wang, Baijun zhang, Yang Liu, Jin-Ping Ao,