Article ID Journal Published Year Pages File Type
7118001 Materials Science in Semiconductor Processing 2018 8 Pages PDF
Abstract
In an attempt to facilitate annealing assisted self assembly, we have grown amorphous ZnS films using rapid vacuum evaporation technique and followed by air annealing at an elevated temperature for longer duration. It has been found that ultra long microwires were formed as a consequence of air annealing assisted asymmetric mass flow. However on further increase in annealing temperature the microwires were found to be squeezed, forming larger macromolecules. XRD studies revealed the gradual transition from amorphous to crystalline phase with preferential orientation along (008) hexagonal phase. Photoluminescence studies revealed multiple defect transition caused by annealing.
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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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